Radiation Effects in FPGAs
نویسنده
چکیده
Total ionizing dose (TID) effects and single event effects (SEE) in antifuse-, Flash-, and SRAM-based field programmable gate arrays (FPGAs) are reviewed. There is a brief discussion of the programmable element impact on the FPGA architecture. In the following sections, most radiation data are from antifuse-based FPGAs. The basic TID mechanisms are introduced and used to explain the anomalies in the FPGAs. Power supply current (ICC) and propagation delay (tP) are parameters used most often to study the TID effects. SEE is focused on the single event upset (SEU) and its various manifestations on devices. The discussion starts with basic SEU mechanisms in a latch and in a buffer. Clock upset and control logic upset are defined and studied with examples. The consequent hardening for each TID or SEE case is also discussed after the elucidation of the anomalies.
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